Invited Speakers and Preliminary Talk Titles

 ♦  Defects evolution and control in AlN

     Dabing Li, Changchun Institute of Optics, Fine Mechanics and Physics, CAS, China

♦  The origins of the defect configurations observed in SiC substrates and epilayers

    Michael Dudley, Stony Brook University, USA

♦  Recognition and imaging of point defects' diffusion, recombination and reaction in
    Czochralski-silicon crystals during growth

    Masataka Hourai, Senior Professional Engineer Technology Division,
    SUMCO Corporation, Japan

♦  Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy

    Daniela Cavalcoli, Physics and Astronomy Department, University of Bologna, Italy

♦  Current Status of Characterization of Defects in EFG-grown β-Ga2O3 Single Crystals

    Osamu Ueda,  Meiji University, Japan

♦  Damage free plasma etching processes of III-V semiconductors for micro-electronic,
    photonic and photovoltaic applications

    Erwine Pargon, CNRS-Grenoble, France

♦  Two-, three- and four-dimensional STEM characterization of antiphase domains in GaP/Si
    utilizing quantitative image simulation

    Andreas Beyer, Philipps University of Marburg, Germany

♦  Defect control in III-nitride semiconductors 

    Bo Shen, Beijing University, China

♦  Influence of growth polarity switching on the optical and electrical properties of
    (Al,Ga)N/GaN nanowire LEDs

    Anna Reszka, Institute of Physics, Polish Academy of Sciences, Poland

♦ Doping in nitrides by combining different techniques like HRSTEM, EDX,
   electron holography and atom probe tomography

   Catherine Bougerol, Neel Institute, CNRS France

♦  In situ growth and characterization of oxide on transition metal surfaces
    and novel 2D materials

    Ingo Flege, Brandenburg University of Technology Cottbus-Senftenberg, Germany

♦  Nanometer-scale characterization and imaging of interface properties and bulk defects
    in Ga2O3 and GaN-based materials and device structures

    Jonathan Pelz, Ohio State University, USA

♦  Thermoreflectance-based investigation of facet optical absorption and catastrophic
    optical mirror damage in high power diode lasers

    Paul Orville Leisher, Freedom Photonics LLC, Santa Barbara, CA, USA